Information card for entry 4133585

Structure parameters

• Formula: C56 H64 N4 Si2
• Calculated formula: C56 H64 N4 Si2
• SMILES: [Si]12([Si](N(/C(=N/C(C)(C)C)c3ccccc3)C(C)(C)C)(C(=C2c2ccccc2)c2ccccc2)c2c3c1ccc1c3c(cc2)CC1)N(C(C)(C)C)/C(=N/C(C)(C)C)c1ccccc1
• Title of publication: Geometrically Compelled Disilene with λ⁴-Coordinate Si^II Atoms.
• Authors of publication: Kostenko, Arseni; Driess, Matthias
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2018
• Journal volume: 140
• Journal issue: 49
• Pages of publication: 16962 - 16966
• a: 10.5082 ± 0.0006 Å
• b: 13.0458 ± 0.0008 Å
• c: 19.448 ± 0.001 Å
• α: 76.133 ± 0.005°
• β: 88.079 ± 0.004°
• γ: 67.359 ± 0.006°
• Cell volume: 2383.8 ± 0.3 ų
• Cell temperature: 150 ± 0.1 K
• Ambient diffraction temperature: 150 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1073
• Residual factor for significantly intense reflections: 0.0621
• Weighted residual factors for significantly intense reflections: 0.1371
• Weighted residual factors for all reflections included in the refinement: 0.167
• Goodness-of-fit parameter for all reflections included in the refinement: 1.01
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No