Information card for entry 4133982

Structure parameters

• Formula: Ga27 Rb8 Sb19
• Calculated formula: Ga27 Rb8 Sb19
• Title of publication: III-V Clathrate Semiconductors with Outstanding Hole Mobility: Cs₈In₂₇Sb₁₉ and <i>A</i>₈Ga₂₇Sb₁₉ (<i>A</i> = Cs, Rb).
• Authors of publication: Owens-Baird, Bryan; Wang, Jian; Wang, Suyin Grass; Chen, Yu-Sheng; Lee, Shannon; Donadio, Davide; Kovnir, Kirill
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2020
• Journal volume: 142
• Journal issue: 4
• Pages of publication: 2031 - 2041
• a: 22.8962 ± 0.00004 Å
• b: 22.8962 ± 0.00004 Å
• c: 22.8962 ± 0.00004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 12003 ± 0.04 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 206
• Hermann-Mauguin space group symbol: I a -3
• Hall space group symbol: -I 2b 2c 3
• Residual factor for all reflections: 0.0514
• Residual factor for significantly intense reflections: 0.0426
• Weighted residual factors for all reflections: 0.0508
• Weighted residual factors for significantly intense reflections: 0.0499
• Goodness-of-fit parameter for all reflections: 1.32
• Method of determination: powder diffraction
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.41275 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No