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Information card for entry 4134064
Preview
Coordinates | 4134064.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C32 H90 N5 O2 Si8 U2 |
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Calculated formula | C32 H90 N5 O2 Si8 U2 |
SMILES | [U]1([O]2CCCC2)(N[U]([H]1)([O]1CCCC1)(N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C |
Title of publication | C-H Bond Activation by an Isolated Dinuclear U(III)/U(IV) Nitride. |
Authors of publication | Palumbo, Chad T.; Scopelliti, Rosario; Zivkovic, Ivica; Mazzanti, Marinella |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2020 |
a | 10.4218 ± 0.0016 Å |
b | 12.6637 ± 0.0019 Å |
c | 21.703 ± 0.003 Å |
α | 84.395 ± 0.013° |
β | 76.525 ± 0.013° |
γ | 77.75 ± 0.013° |
Cell volume | 2718.6 ± 0.7 Å3 |
Cell temperature | 140 ± 0.1 K |
Ambient diffraction temperature | 140 ± 0.1 K |
Number of distinct elements | 6 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.1816 |
Residual factor for significantly intense reflections | 0.0824 |
Weighted residual factors for significantly intense reflections | 0.1817 |
Weighted residual factors for all reflections included in the refinement | 0.2128 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.804 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4134064.html
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