Information card for entry 4302741

Structure parameters

• Formula: Cu Ga2 O10 Se3
• Calculated formula: Cu Ga2 O10 Se3
• Title of publication: Explorations of New Phases in the GaIII/InIII-CuII-SeIV-O System
• Authors of publication: Fang Kong; Qi-Pu Lin; Fei-Yan Yi; Jiang-Gao Mao
• Journal of publication: Inorganic Chemistry
• Year of publication: 2009
• Journal volume: 48
• Pages of publication: 6794 - 6803
• a: 6.495 ± 0.002 Å
• b: 9.598 ± 0.003 Å
• c: 13.443 ± 0.005 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 838 ± 0.5 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 4
• Space group number: 53
• Hermann-Mauguin space group symbol: P m n a
• Hall space group symbol: -P 2ac 2
• Residual factor for all reflections: 0.0256
• Residual factor for significantly intense reflections: 0.0213
• Weighted residual factors for significantly intense reflections: 0.0583
• Weighted residual factors for all reflections included in the refinement: 0.0604
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No