Information card for entry 4308376

Structure parameters

• Formula: C36 H51 N2 S2 Si4 V
• Calculated formula: C36 H51 N2 S2 Si4 V
• SMILES: [V]1(Sc2c([Si](C)(C)C)cccc2[Si](C)(C)C)(N(Sc2c([Si](C1)(C)C)cccc2[Si](C)(C)C)c1ccccc1)=Nc1ccccc1
• Title of publication: Synthesis of a Vanadium(III) Tris(arylthiolato) Complex and Its Reactions with Azide and Azo Compounds: Formation of a Sulfenamide Complex via Cleavage of an Azo NN Bond
• Authors of publication: Komuro, Takashi; Matsuo, Tsukasa; Kawaguchi, Hiroyuki; Tatsumi, Kazuyuki
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Journal issue: 2
• Pages of publication: 175 - 177
• a: 20.069 ± 0.005 Å
• b: 9.974 ± 0.002 Å
• c: 21.713 ± 0.005 Å
• α: 90°
• β: 111.376 ± 0.004°
• γ: 90°
• Cell volume: 4047.3 ± 1.6 ų
• Cell temperature: 173.1 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.053
• Weighted residual factors for all reflections included in the refinement: 0.107
• Goodness-of-fit parameter for all reflections included in the refinement: 1.014
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No