Information card for entry 4318310

Structure parameters

• Formula: C55 H118 Cl3 O7 P9 Si3 V3
• Calculated formula: C51 H115 Cl3 O6 P9 Si3 V3
• Title of publication: Synthesis, Characterization, and Solution Redox Properties of (trimpsi)M(CO)2(NO) Complexes [M = V, Nb, Ta; trimpsi = tBuSi(CH2PMe2)3]
• Authors of publication: Trevor W. Hayton; P. James Daff; Peter Legzdins; Steven J. Rettig; Brian O. Patrick
• Journal of publication: Inorganic Chemistry
• Year of publication: 2002
• Journal volume: 41
• Pages of publication: 4114 - 4126
• a: 10.6262 ± 0.0002 Å
• b: 18.929 ± 0.0004 Å
• c: 20.7077 ± 0.0006 Å
• α: 83.072 ± 0.006°
• β: 82.975 ± 0.006°
• γ: 74.774 ± 0.005°
• Cell volume: 3971.76 ± 0.19 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0756
• Residual factor for significantly intense reflections: 0.0476
• Weighted residual factors for significantly intense reflections: 0.1187
• Weighted residual factors for all reflections included in the refinement: 0.1284
• Goodness-of-fit parameter for all reflections included in the refinement: 0.965
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No