Crystallography Open Database

Information card for entry 4319065

4319064 << 4319065 >> 4319066

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Coordinates	4319065.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Bi Cs Ge S4
Calculated formula	Bi Cs Ge S4
Title of publication	New Quaternary Bismuth Sulfides: Syntheses, Structures, and Band Structures of AMBiS4 (A = Rb, Cs; M = Si, Ge)
Authors of publication	Jiyong Yao; Bin Deng; Donald E. Ellis; James A. Ibers
Journal of publication	Inorganic Chemistry
Year of publication	2002
Journal volume	41
Pages of publication	7094 - 7099
a	6.5474 ± 0.0004 Å
b	6.9282 ± 0.0004 Å
c	18.8875 ± 0.0011 Å
α	90°
β	110.173 ± 0.001°
γ	90°
Cell volume	804.21 ± 0.08 Å³
Cell temperature	153 ± 2 K
Ambient diffraction temperature	153 ± 2 K
Number of distinct elements	4
Space group number	14
Hermann-Mauguin space group symbol	P 1 21/c 1
Hall space group symbol	-P 2ybc
Residual factor for all reflections	0.0275
Residual factor for significantly intense reflections	0.0264
Weighted residual factors for significantly intense reflections	0.0791
Weighted residual factors for all reflections included in the refinement	0.0794
Goodness-of-fit parameter for all reflections included in the refinement	1.94
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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