Crystallography Open Database

Information card for entry 4320367

4320366 << 4320367 >> 4320368

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Structure parameters

Common name	[NacNacGe][OH{B(C6F5)3}2]
Formula	C65 H42 B2 F30 Ge N2 O
Calculated formula	C65 H42 B2 F30 Ge N2 O
SMILES	[Ge]1N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C.[OH]([B](c1c(F)c(F)c(F)c(F)c1F)(c1c(F)c(F)c(F)c(F)c1F)c1c(F)c(F)c(F)c(F)c1F)[B](c1c(F)c(F)c(F)c(F)c1F)(c1c(F)c(F)c(F)c(F)c1F)c1c(F)c(F)c(F)c(F)c1F
Title of publication	Characterization and Bonding of the Cation [Ge{N(C6H3-2,6-i-Pr2)CMe}2CH]+: Comparison with the Isoelectronic Ga{N(C6H3-2,6-i-Pr2)CMe}2CH
Authors of publication	Matthias Stender; Andrew D. Phillips; Philip P. Power
Journal of publication	Inorganic Chemistry
Year of publication	2001
Journal volume	40
Pages of publication	5314 - 5315
a	20.2586 ± 0.0007 Å
b	17.5332 ± 0.0006 Å
c	18.5394 ± 0.0006 Å
α	90°
β	109.736 ± 0.001°
γ	90°
Cell volume	6198.3 ± 0.4 Å³
Cell temperature	90 ± 2 K
Ambient diffraction temperature	90 ± 2 K
Number of distinct elements	7
Space group number	14
Hermann-Mauguin space group symbol	P 1 21/c 1
Hall space group symbol	-P 2ybc
Residual factor for all reflections	0.147
Residual factor for significantly intense reflections	0.0561
Weighted residual factors for significantly intense reflections	0.1021
Weighted residual factors for all reflections included in the refinement	0.1341
Goodness-of-fit parameter for all reflections included in the refinement	0.992
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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