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Information card for entry 4321096
Preview
Coordinates | 4321096.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C52 H44 Cu N16 |
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Calculated formula | C52 H44 Cu N16 |
SMILES | C1(C)=[N]2[Cu]34[NH](C(C1)(C)C)CC[N]4=C(CC(C)(C)[NH]3CC2)C.C(#N)C(C#N)=C1C=CC(C=C1)=C(C#N)C#N.N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1.C(#N)C(C#N)=C1C=CC(C=C1)=C(C#N)C#N |
Title of publication | Delocalized TCNQ Stacks in Nickel and Copper Tetraazamacrocyclic Systems |
Authors of publication | Loreto Ballester; Ana M. Gil; Angel Gutiérrez; M. Felisa Perpiñán; María Teresa Azcondo; Ana E. Sánchez; Eugenio Coronado; Carlos J. Gómez-García |
Journal of publication | Inorganic Chemistry |
Year of publication | 2000 |
Journal volume | 39 |
Pages of publication | 2837 - 2842 |
a | 7.8721 ± 0.001 Å |
b | 9.84 ± 0.001 Å |
c | 14.8196 ± 0.001 Å |
α | 92.327 ± 0.01° |
β | 95.052 ± 0.01° |
γ | 95.66 ± 0.01° |
Cell volume | 1136.5 ± 0.2 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 4 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.4109 |
Residual factor for significantly intense reflections | 0.0852 |
Weighted residual factors for all reflections | 0.2877 |
Weighted residual factors for significantly intense reflections | 0.1841 |
Goodness-of-fit parameter for all reflections | 0.974 |
Goodness-of-fit parameter for significantly intense reflections | 1.293 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4321096.html
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Users of the data should acknowledge the original authors of the
structural data.