Information card for entry 4324115

Structure parameters

• Formula: C12 H4 Ga O8
• Calculated formula: C12 H4 Ga O8
• Title of publication: Anionic Gallium-Based Metal-Organic Framework and Its Sorption and Ion-Exchange Properties
• Authors of publication: Debasis Banerjee; Sun Jin Kim; Haohan Wu; Wenqian Xu; Lauren A. Borkowski; Jing Li; John B. Parise
• Journal of publication: Inorganic Chemistry
• Year of publication: 2011
• Journal volume: 50
• Pages of publication: 208 - 212
• a: 19.9611 ± 0.0009 Å
• b: 19.9611 ± 0.0009 Å
• c: 19.9611 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 7953.4 ± 0.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 220
• Hermann-Mauguin space group symbol: I -4 3 d
• Hall space group symbol: I -4bd 2c 3
• Residual factor for all reflections: 0.0306
• Residual factor for significantly intense reflections: 0.0263
• Weighted residual factors for significantly intense reflections: 0.0598
• Weighted residual factors for all reflections included in the refinement: 0.0608
• Goodness-of-fit parameter for all reflections included in the refinement: 1.07
• Diffraction radiation wavelength: 0.41328 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No