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Information card for entry 4327835
Preview
Coordinates | 4327835.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | VOTTDPz |
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Chemical name | vanadyl tetrakisthiadiazoleporphyrazine |
Formula | C16 N16 O S4 V |
Calculated formula | C16 N16 O S4 V |
SMILES | [V]123([N]4=C5N=C6[N]2=C(N=C2[N]3=C(c3nsnc23)N=C2[N]1=C(N=C4c1nsnc51)c1nsnc21)c1nsnc61)=O |
Title of publication | Crystal Structure, Spin Polarization, Solid-State Electrochemistry, and High n-Type Carrier Mobility of a Paramagnetic Semiconductor: Vanadyl Tetrakis(thiadiazole)porphyrazine |
Authors of publication | Yasuhito Miyoshi; Kouji Takahashi; Takuya Fujimoto; Hirofumi Yoshikawa; Michio M. Matsushita; Yukio Ouchi; Mikael Kepenekian; Vincent Robert; Maria Pia Donzello; Claudio Ercolani; Kunio Awaga |
Journal of publication | Inorganic Chemistry |
Year of publication | 2012 |
Journal volume | 51 |
Pages of publication | 456 - 462 |
a | 7.0675 ± 0.0015 Å |
b | 22.183 ± 0.005 Å |
c | 24.77 ± 0.006 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 3883.4 ± 1.5 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 5 |
Space group number | 61 |
Hermann-Mauguin space group symbol | P b c a |
Hall space group symbol | -P 2ac 2ab |
Residual factor for all reflections | 0.0538 |
Residual factor for significantly intense reflections | 0.0488 |
Weighted residual factors for significantly intense reflections | 0.1156 |
Weighted residual factors for all reflections included in the refinement | 0.1194 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.155 |
Diffraction radiation wavelength | 0.7107 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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