Information card for entry 4334667

Structure parameters

• Formula: C10 H28 Cl4 P4 Si
• Calculated formula: C10 H28 Cl4 P4 Si
• SMILES: C([P](C)([Si](Cl)(Cl)([P](CP(C)C)(C)C)(Cl)Cl)C)P(C)C
• Title of publication: Phosphine and Diphosphine Complexes of Silicon(IV) Halides
• Authors of publication: William Levason; David Pugh; Gillian Reid
• Journal of publication: Inorganic Chemistry
• Year of publication: 2013
• Journal volume: 52
• Pages of publication: 5185 - 5193
• a: 6.7173 ± 0.001 Å
• b: 8.6973 ± 0.0013 Å
• c: 8.9154 ± 0.0013 Å
• α: 88.954 ± 0.006°
• β: 89.753 ± 0.006°
• γ: 86.672 ± 0.007°
• Cell volume: 519.89 ± 0.13 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0443
• Residual factor for significantly intense reflections: 0.0333
• Weighted residual factors for significantly intense reflections: 0.0717
• Weighted residual factors for all reflections included in the refinement: 0.0759
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No