Information card for entry 4335420

Structure parameters

• Formula: C24 H72 N4 Si8 U
• Calculated formula: C24 H72 N4 Si8 U
• SMILES: [U](N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Tetrakis(bis(trimethylsilyl)amido)uranium(IV): Synthesis and Reactivity
• Authors of publication: Andrew J. Lewis; Ursula J. Williams; Patrick J. Carroll; Eric J. Schelter
• Journal of publication: Inorganic Chemistry
• Year of publication: 2013
• Journal volume: 52
• Pages of publication: 7326 - 7328
• a: 15.9454 ± 0.0005 Å
• b: 11.5448 ± 0.0003 Å
• c: 23.196 ± 0.0007 Å
• α: 90°
• β: 90.003 ± 0.002°
• γ: 90°
• Cell volume: 4270.1 ± 0.2 ų
• Cell temperature: 143 ± 1 K
• Ambient diffraction temperature: 143 ± 1 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0279
• Residual factor for significantly intense reflections: 0.0181
• Weighted residual factors for significantly intense reflections: 0.0378
• Weighted residual factors for all reflections included in the refinement: 0.0407
• Goodness-of-fit parameter for all reflections included in the refinement: 1.011
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No