Information card for entry 4336669

Structure parameters

• Formula: Ga3 H6 O14 Rb Se2
• Calculated formula: Ga3 H6 O14 Rb Se2
• Title of publication: From an Open Framework to a Layered and a Hexagonal Tungsten Oxide Structure: Controlled Transformation Reactions of an Extended Solid-State Material, Cs3Ga7(SeO3)12 to Ga(OH)(SeO3) and KGa3(SeO4)2(OH)6
• Authors of publication: Hyun Sun Ahn; Dong Woo Lee; Kang Min Ok
• Journal of publication: Inorganic Chemistry
• Year of publication: 2013
• Journal volume: 52
• Pages of publication: 12726 - 12730
• a: 7.2641 ± 0.001 Å
• b: 7.2641 ± 0.001 Å
• c: 18.141 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 829 ± 0.2 ų
• Cell temperature: 298 ± 0.2 K
• Ambient diffraction temperature: 298 ± 0.2 K
• Number of distinct elements: 5
• Space group number: 166
• Hermann-Mauguin space group symbol: R -3 m :H
• Hall space group symbol: -R 3 2"
• Residual factor for all reflections: 0.0192
• Residual factor for significantly intense reflections: 0.0182
• Weighted residual factors for significantly intense reflections: 0.0511
• Weighted residual factors for all reflections included in the refinement: 0.0516
• Goodness-of-fit parameter for all reflections included in the refinement: 1.301
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No