Information card for entry 4338546

Structure parameters

• Formula: Ag3.95 Ba4 Ge2 Te9
• Calculated formula: Ag3.946 Ba4 Ge2 Te9
• Title of publication: Synthesis and Structural and Physical Properties of New Semiconducting Quaternary Tellurides: Ba~4~Ag~3.95~Ge~2~Te~9~ and Ba~4~Cu~3.71~Ge~2~Te~9~
• Authors of publication: Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger
• Journal of publication: Inorganic chemistry
• Year of publication: 2009
• Journal volume: 48
• Journal issue: 12
• Pages of publication: 5313 - 5319
• a: 8.6835 ± 0.0003 Å
• b: 13.6421 ± 0.0004 Å
• c: 10.2612 ± 0.0003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1215.55 ± 0.07 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 55
• Hermann-Mauguin space group symbol: P b a m
• Hall space group symbol: -P 2 2ab
• Residual factor for all reflections: 0.016
• Residual factor for significantly intense reflections: 0.0154
• Weighted residual factors for significantly intense reflections: 0.0327
• Weighted residual factors for all reflections included in the refinement: 0.0329
• Goodness-of-fit parameter for all reflections included in the refinement: 1.207
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No