Information card for entry 4339608

Structure parameters

• Formula: Eu Ga Si
• Calculated formula: Eu Ga1.002 Si0.998
• Title of publication: Planar versus puckered nets in the polar intermetallic series EuGaTt (Tt = Si, Ge, Sn).
• Authors of publication: You, Tae-Soo; Grin, Yuri; Miller, Gordon J.
• Journal of publication: Inorganic chemistry
• Year of publication: 2007
• Journal volume: 46
• Journal issue: 21
• Pages of publication: 8801 - 8811
• a: 4.1687 ± 0.0006 Å
• b: 4.1687 ± 0.0006 Å
• c: 4.5543 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 68.541 ± 0.019 ų
• Cell temperature: 292 ± 2 K
• Ambient diffraction temperature: 292 ± 2 K
• Number of distinct elements: 3
• Space group number: 191
• Hermann-Mauguin space group symbol: P 6/m m m
• Hall space group symbol: -P 6 2
• Residual factor for all reflections: 0.015
• Residual factor for significantly intense reflections: 0.015
• Weighted residual factors for significantly intense reflections: 0.0323
• Weighted residual factors for all reflections included in the refinement: 0.0323
• Goodness-of-fit parameter for all reflections included in the refinement: 1.185
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No