Information card for entry 4339807

Structure parameters

• Formula: C22 H52 N2 O P2 Ru Si2
• Calculated formula: C22 H52 N2 O P2 Ru Si2
• SMILES: [Ru]12([P](C[Si](N2[Si](C)(C)C[P]1(C(C)(C)C)C(C)(C)C)(C)C)(C(C)(C)C)C(C)(C)C)N=O
• Title of publication: Radical (NO) and nonradical (N(2)O) reagents convert a ruthenium(IV) nitride to the same nitrosyl complex.
• Authors of publication: Walstrom, Amy; Pink, Maren; Fan, Hongjun; Tomaszewski, John; Caulton, Kenneth G.
• Journal of publication: Inorganic chemistry
• Year of publication: 2007
• Journal volume: 46
• Journal issue: 19
• Pages of publication: 7704 - 7706
• a: 15.0843 ± 0.0006 Å
• b: 12.5588 ± 0.0005 Å
• c: 31.2717 ± 0.0012 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5924.1 ± 0.4 ų
• Cell temperature: 130 ± 2 K
• Ambient diffraction temperature: 130 ± 2 K
• Number of distinct elements: 7
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0327
• Residual factor for significantly intense reflections: 0.0234
• Weighted residual factors for significantly intense reflections: 0.0536
• Weighted residual factors for all reflections included in the refinement: 0.0638
• Goodness-of-fit parameter for all reflections included in the refinement: 1.123
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No