Information card for entry 4339910

Structure parameters

• Chemical name: 1,2-bis(diethylphosphino)ethanebis(tri-iodogallium(III))
• Formula: C10 H24 Ga2 I6 P2
• Calculated formula: C10 H24 Ga2 I6 P2
• SMILES: I[Ga](I)([P](CC)(CC)CC[P](CC)(CC)[Ga](I)(I)I)I
• Title of publication: Preparation, characterization, and structural systematics of diphosphane and diarsane complexes of gallium(III) halides.
• Authors of publication: Cheng, Fei; Hector, Andrew L.; Levason, William; Reid, Gillian; Webster, Michael; Zhang, Wenjian
• Journal of publication: Inorganic chemistry
• Year of publication: 2007
• Journal volume: 46
• Journal issue: 17
• Pages of publication: 7215 - 7223
• a: 7.7763 ± 0.0018 Å
• b: 7.818 ± 0.002 Å
• c: 10.993 ± 0.003 Å
• α: 86.676 ± 0.015°
• β: 82.577 ± 0.015°
• γ: 80.447 ± 0.018°
• Cell volume: 653.1 ± 0.3 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0607
• Residual factor for significantly intense reflections: 0.0383
• Weighted residual factors for significantly intense reflections: 0.081
• Weighted residual factors for all reflections included in the refinement: 0.0887
• Goodness-of-fit parameter for all reflections included in the refinement: 1.065
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No