Information card for entry 4339913

Structure parameters

• Chemical name: bis(triiodogallium(III)){mu2-1,2-bis(diphenylarsino)ethane}
• Formula: C26 H24 As2 Ga2 I6
• Calculated formula: C26 H24 As2 Ga2 I6
• SMILES: [Ga](I)(I)(I)[As](CC[As]([Ga](I)(I)I)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Preparation, characterization, and structural systematics of diphosphane and diarsane complexes of gallium(III) halides.
• Authors of publication: Cheng, Fei; Hector, Andrew L.; Levason, William; Reid, Gillian; Webster, Michael; Zhang, Wenjian
• Journal of publication: Inorganic chemistry
• Year of publication: 2007
• Journal volume: 46
• Journal issue: 17
• Pages of publication: 7215 - 7223
• a: 10.1666 ± 0.001 Å
• b: 15.4125 ± 0.0015 Å
• c: 23.181 ± 0.002 Å
• α: 90°
• β: 99.036 ± 0.005°
• γ: 90°
• Cell volume: 3587.2 ± 0.6 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0628
• Residual factor for significantly intense reflections: 0.045
• Weighted residual factors for significantly intense reflections: 0.0832
• Weighted residual factors for all reflections included in the refinement: 0.0913
• Goodness-of-fit parameter for all reflections included in the refinement: 1.149
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No