Information card for entry 4340531

Structure parameters

• Common name: zinc monoarsenide
• Formula: As Zn
• Calculated formula: As Zn
• Title of publication: Synthesis, Structure, and Properties of the Electron-Poor II-V Semiconductor ZnAs.
• Authors of publication: Fischer, Andreas; Eklöf, Daniel; Benson, Daryn E.; Wu, Yang; Scheidt, Ernst-Wilhelm; Scherer, Wolfgang; Häussermann, Ulrich
• Journal of publication: Inorganic chemistry
• Year of publication: 2014
• Journal volume: 53
• Journal issue: 16
• Pages of publication: 8691 - 8699
• a: 5.6607 ± 0.0003 Å
• b: 7.2774 ± 0.0004 Å
• c: 7.5599 ± 0.0005 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 311.43 ± 0.03 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 2
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0152
• Residual factor for significantly intense reflections: 0.0152
• Weighted residual factors for significantly intense reflections: 0.0225
• Weighted residual factors for all reflections included in the refinement: 0.0225
• Goodness-of-fit parameter for significantly intense reflections: 1.43
• Goodness-of-fit parameter for all reflections included in the refinement: 1.43
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.56087 Å
• Diffraction radiation type: AgKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No