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Information card for entry 4340895
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Coordinates | 4340895.cif |
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Original paper (by DOI) | HTML |
Common name | cerium tellurium vanadate |
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Formula | Ce O20 Te3 V3 |
Calculated formula | Ce O20 Te3 V3 |
Title of publication | LnV3Te3O15(OH)3·nH2O (Ln = Ce, Pr, Nd, Sm, Eu, Gd; n = 1-2): A New Series of Semiconductors with Mixed-Valent Tellurium (IV,VI) Oxoanions. |
Authors of publication | Lin, Jian; Diefenbach, Kariem; Fu, Jingcheng; Cross, Justin N.; Clark, Ronald J.; Albrecht-Schmitt, Thomas E |
Journal of publication | Inorganic chemistry |
Year of publication | 2014 |
Journal volume | 53 |
Journal issue | 17 |
Pages of publication | 9058 - 9064 |
a | 12.166 ± 0.005 Å |
b | 12.166 ± 0.005 Å |
c | 12.537 ± 0.005 Å |
α | 90° |
β | 90° |
γ | 120° |
Cell volume | 1607 ± 1.1 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 4 |
Space group number | 194 |
Hermann-Mauguin space group symbol | P 63/m m c |
Hall space group symbol | -P 6c 2c |
Residual factor for all reflections | 0.0427 |
Residual factor for significantly intense reflections | 0.0389 |
Weighted residual factors for significantly intense reflections | 0.0992 |
Weighted residual factors for all reflections included in the refinement | 0.1017 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.149 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
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