Information card for entry 4341924

Structure parameters

• Formula: C13 H35 Cl O Si4 Zn
• Calculated formula: C13 H32 Cl O Si4 Zn
• Title of publication: Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth.
• Authors of publication: Sirimanne, Chatu T.; Kerrigan, Marissa M.; Martin, Philip D.; Kanjolia, Ravindra K.; Elliott, Simon D.; Winter, Charles H.
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 54
• Journal issue: 1
• Pages of publication: 7 - 9
• a: 9.6739 ± 0.0009 Å
• b: 20.572 ± 0.002 Å
• c: 12.7134 ± 0.0013 Å
• α: 90°
• β: 104.573 ± 0.004°
• γ: 90°
• Cell volume: 2448.7 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1032
• Residual factor for significantly intense reflections: 0.0776
• Weighted residual factors for significantly intense reflections: 0.239
• Weighted residual factors for all reflections included in the refinement: 0.255
• Goodness-of-fit parameter for all reflections included in the refinement: 1.824
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No