Information card for entry 4344687

Structure parameters

• Formula: Ga O8 Te2 V
• Calculated formula: Ga O8 Te2 V
• Title of publication: Synthesis and Characterization of Three New Layered Vanadium Tellurites, MVTe2O8 (M = Al, Ga, and Mn): Three-Dimensional (3-D) Antiferromagnetic Behavior of MnVTe2O8 with a Zigzag S = 2 Spin Chain.
• Authors of publication: Bae, Su-Whan; Yoo, Jisun; Lee, Suheon; Choi, Kwang Yong; Ok, Kang Min
• Journal of publication: Inorganic chemistry
• Year of publication: 2016
• Journal volume: 55
• Journal issue: 3
• Pages of publication: 1347 - 1353
• a: 7.9198 ± 0.0002 Å
• b: 4.9169 ± 0.0001 Å
• c: 16.4311 ± 0.0004 Å
• α: 90°
• β: 93.816 ± 0.002°
• γ: 90°
• Cell volume: 638.42 ± 0.03 ų
• Cell temperature: 298 ± 0.2 K
• Ambient diffraction temperature: 298 ± 0.2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0312
• Residual factor for significantly intense reflections: 0.0242
• Weighted residual factors for significantly intense reflections: 0.0547
• Weighted residual factors for all reflections included in the refinement: 0.0564
• Goodness-of-fit parameter for all reflections included in the refinement: 1.024
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No