Information card for entry 4344762

Structure parameters

• Formula: C38 H56 N3 O P Si2
• Calculated formula: C38 H56 N3 O P Si2
• SMILES: P([Si](O[Si](C)(C)C)(=Nc1c(cccc1C(C)C)C(C)C)=C1N(C(=C(N1C(C)C)C)C)C(C)C)(c1ccccc1)c1ccccc1
• Title of publication: Controlled Oxidation of an NHC-Stabilized Phosphinoaminosilylene with Dioxygen.
• Authors of publication: Cui, Haiyan; Zhang, Jianying; Tao, Yunwen; Cui, Chunming
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 55
• Journal issue: 1
• Pages of publication: 46
• a: 18.7 ± 0.004 Å
• b: 11.581 ± 0.003 Å
• c: 17.899 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3876.3 ± 1.6 ų
• Cell temperature: 113 ± 2 K
• Ambient diffraction temperature: 113 ± 2 K
• Number of distinct elements: 6
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0369
• Residual factor for significantly intense reflections: 0.0341
• Weighted residual factors for significantly intense reflections: 0.0797
• Weighted residual factors for all reflections included in the refinement: 0.0808
• Goodness-of-fit parameter for all reflections included in the refinement: 1.064
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No