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Information card for entry 4345284
Preview
Coordinates | 4345284.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | T2@PR |
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Formula | C20 H48 Ge4 N4 S10 |
Calculated formula | C20 H48 Ge4 N4 S10 |
SMILES | C1CCCC[NH2+]1.S1[Ge]2(S[Ge]3(S[Ge](S[Ge]1(S3)[S-])(S2)[S-])[S-])[S-].C1CCCC[NH2+]1.C1CCCC[NH2+]1.C1CCCC[NH2+]1 |
Title of publication | Substituent-Modulated Assembly Formation: An Approach to Enhancing the Photostability of Photoelectric-Sensitive Chalcogenide-Based Ion-Pair Hybrids. |
Authors of publication | Lin, Jian; Fu, Zhixing; Zhang, Jiaxu; Zhu, Yujia; Hu, Dandan; Li, Dongsheng; Wu, Tao |
Journal of publication | Inorganic chemistry |
Year of publication | 2017 |
Journal volume | 56 |
Journal issue | 6 |
Pages of publication | 3119 - 3122 |
a | 14.8804 ± 0.0002 Å |
b | 14.8804 ± 0.0002 Å |
c | 8.667 ± 0.0003 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 1919.1 ± 0.08 Å3 |
Cell temperature | 294.25 ± 0.19 K |
Ambient diffraction temperature | 294.25 ± 0.19 K |
Number of distinct elements | 5 |
Space group number | 86 |
Hermann-Mauguin space group symbol | P 42/n :2 |
Hall space group symbol | -P 4bc |
Residual factor for all reflections | 0.0259 |
Residual factor for significantly intense reflections | 0.0202 |
Weighted residual factors for significantly intense reflections | 0.0481 |
Weighted residual factors for all reflections included in the refinement | 0.0499 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.026 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4345284.html
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