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Information card for entry 4345288
Preview
Coordinates | 4345288.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | T2@n-BV |
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Formula | C36 H52 Ge4 N4 S10 |
Calculated formula | C36 H52 Ge4 N4 S10 |
SMILES | c1(cc[n+](CCCC)cc1)c1cc[n+](cc1)CCCC.S1[Ge]2([S-])S[Ge]3([S-])S[Ge]([S-])(S[Ge]1([S-])S3)S2.c1cc(c2cc[n+](cc2)CCCC)cc[n+]1CCCC |
Title of publication | Substituent-Modulated Assembly Formation: An Approach to Enhancing the Photostability of Photoelectric-Sensitive Chalcogenide-Based Ion-Pair Hybrids. |
Authors of publication | Lin, Jian; Fu, Zhixing; Zhang, Jiaxu; Zhu, Yujia; Hu, Dandan; Li, Dongsheng; Wu, Tao |
Journal of publication | Inorganic chemistry |
Year of publication | 2017 |
Journal volume | 56 |
Journal issue | 6 |
Pages of publication | 3119 - 3122 |
a | 16.0719 ± 0.0006 Å |
b | 16.0719 ± 0.0006 Å |
c | 9.5961 ± 0.0009 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 2478.7 ± 0.3 Å3 |
Cell temperature | 298 ± 1 K |
Ambient diffraction temperature | 298 ± 1 K |
Number of distinct elements | 5 |
Space group number | 86 |
Hermann-Mauguin space group symbol | P 42/n :2 |
Hall space group symbol | -P 4bc |
Residual factor for all reflections | 0.1865 |
Residual factor for significantly intense reflections | 0.0718 |
Weighted residual factors for significantly intense reflections | 0.1442 |
Weighted residual factors for all reflections included in the refinement | 0.1816 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.93 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4345288.html
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