Information card for entry 4345680

Structure parameters

• Formula: Ga Re Si
• Calculated formula: Ga Re Si
• Title of publication: 111-Type Semiconductor ReGaSi Follows 14e(-) Rules.
• Authors of publication: Xie, Weiwei; Gustin, Lea; Bian, Guang
• Journal of publication: Inorganic chemistry
• Year of publication: 2017
• a: 3.1942 ± 0.001 Å
• b: 3.1942 ± 0.001 Å
• c: 8.054 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 82.17 ± 0.04 ų
• Cell temperature: 300 ± 2 K
• Ambient diffraction temperature: 300 ± 2 K
• Number of distinct elements: 3
• Space group number: 129
• Hermann-Mauguin space group symbol: P 4/n m m
• Hall space group symbol: -P 4a 2a
• Residual factor for all reflections: 0.0379
• Residual factor for significantly intense reflections: 0.0371
• Weighted residual factors for significantly intense reflections: 0.0879
• Weighted residual factors for all reflections included in the refinement: 0.0887
• Goodness-of-fit parameter for all reflections included in the refinement: 1.249
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No