Information card for entry 4500157

Structure parameters

• Formula: Ce Cu2 Si2
• Calculated formula: Ce Cu2 Si2
• Title of publication: Single Crystal Growth of the CeCu2Si2Intermetallic Compound by a Vertical Floating Zone Method
• Authors of publication: Cao, Chongde; Deppe, Micha; Behr, Günter; Löser, Wolfgang; Wizent, Nadja; Kataeva, Olga; Büchner, Bernd
• Journal of publication: Crystal Growth & Design
• Year of publication: 2011
• Journal volume: 11
• Journal issue: 2
• Pages of publication: 431
• a: 4.092 ± 0.0004 Å
• b: 4.092 ± 0.0004 Å
• c: 9.91 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 165.94 ± 0.03 ų
• Cell temperature: 198 ± 2 K
• Ambient diffraction temperature: 198 ± 2 K
• Number of distinct elements: 3
• Space group number: 139
• Hermann-Mauguin space group symbol: I 4/m m m
• Hall space group symbol: -I 4 2
• Residual factor for all reflections: 0.0199
• Residual factor for significantly intense reflections: 0.0194
• Weighted residual factors for significantly intense reflections: 0.0479
• Weighted residual factors for all reflections included in the refinement: 0.0481
• Goodness-of-fit parameter for all reflections included in the refinement: 1.292
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No