Information card for entry 4500649
Formula |
Cs2 Mo3 O12 Te |
Calculated formula |
Cs2 Mo3 O12 Te |
Title of publication |
Top-Seeded Solution Growth, Morphology, and Properties of a Polar Crystal Cs2TeMo3O12 |
Authors of publication |
Zhang, Junjie; Tao, Xutang; Sun, Youxuan; Zhang, Zhonghan; Zhang, Chengqian; Gao, Zeliang; Xia, Haibing; Xia, Shengqing |
Journal of publication |
Crystal Growth & Design |
Year of publication |
2011 |
Journal volume |
11 |
Journal issue |
5 |
Pages of publication |
1863 |
a |
7.4045 ± 0.0001 Å |
b |
7.4045 ± 0.0001 Å |
c |
12.2053 ± 0.0002 Å |
α |
90° |
β |
90° |
γ |
120° |
Cell volume |
579.523 ± 0.015 Å3 |
Cell temperature |
293 ± 2 K |
Ambient diffraction temperature |
293 ± 2 K |
Number of distinct elements |
4 |
Space group number |
173 |
Hermann-Mauguin space group symbol |
P 63 |
Hall space group symbol |
P 6c |
Residual factor for all reflections |
0.0139 |
Residual factor for significantly intense reflections |
0.0138 |
Weighted residual factors for significantly intense reflections |
0.0318 |
Weighted residual factors for all reflections included in the refinement |
0.0318 |
Goodness-of-fit parameter for all reflections included in the refinement |
1.2 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/4500649.html