Information card for entry 4503531

Structure parameters

• Formula: Ga3 O7 P
• Calculated formula: Ga3 O7 P
• Title of publication: Flux Growth and Characterizations of Ga3PO7Single Crystals
• Authors of publication: Xu, Guogang; Li, Jing; Wang, Jiyang; Zhao, Hongyang; Liu, Hong
• Journal of publication: Crystal Growth & Design
• Year of publication: 2008
• Journal volume: 8
• Journal issue: 10
• Pages of publication: 3577
• a: 7.897 ± 0.003 Å
• b: 7.897 ± 0.003 Å
• c: 6.757 ± 0.006 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 364.9 ± 0.4 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 160
• Hermann-Mauguin space group symbol: R 3 m :H
• Hall space group symbol: R 3 -2"
• Residual factor for all reflections: 0.0192
• Residual factor for significantly intense reflections: 0.0192
• Weighted residual factors for significantly intense reflections: 0.0431
• Weighted residual factors for all reflections included in the refinement: 0.0431
• Goodness-of-fit parameter for all reflections included in the refinement: 1.208
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No