Information card for entry 4504192

Structure parameters

• Formula: C18 H42 O6 P3 Sb Se6
• Calculated formula: C18 H42 O6 P3 Sb Se6
• SMILES: CC(OP1(OC(C)C)=[Se][Sb]23([Se]=P(OC(C)C)(OC(C)C)[Se]3)([Se]=P(OC(C)C)(OC(C)C)[Se]2)[Se]1)C
• Title of publication: Synthesis of Sb2Se3Nanowires via a Solvothermal Route from the Single Source Precursor Sb[Se2P(OiPr)2]3
• Authors of publication: Chang, Hao-Wei; Sarkar, Bijay; Liu, C. W.
• Journal of publication: Crystal Growth & Design
• Year of publication: 2007
• Journal volume: 7
• Journal issue: 12
• Pages of publication: 2691
• a: 22.9851 ± 0.0009 Å
• b: 22.9851 ± 0.0009 Å
• c: 12.4864 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 5713 ± 0.6 ų
• Cell temperature: 273 ± 2 K
• Ambient diffraction temperature: 273 ± 2 K
• Number of distinct elements: 6
• Space group number: 148
• Hermann-Mauguin space group symbol: R -3 :H
• Hall space group symbol: -R 3
• Residual factor for all reflections: 0.0461
• Residual factor for significantly intense reflections: 0.0341
• Weighted residual factors for significantly intense reflections: 0.0866
• Weighted residual factors for all reflections included in the refinement: 0.0955
• Goodness-of-fit parameter for all reflections included in the refinement: 1.036
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No