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Information card for entry 4505024
Preview
Coordinates | 4505024.cif |
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Original paper (by DOI) | HTML |
Common name | 2,3,6,7,10,11-Hexakis(methylthio)triphenylene bismuth trichloride |
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Formula | C48 H48 Bi2 Cl6 S12 |
Calculated formula | C48 H48 Bi2 Cl6 S12 |
SMILES | [Bi]1(Cl)(Cl)[Cl][Bi](Cl)(Cl)[Cl]1.c1c(c(cc2c1c1cc(SC)c(cc1c1cc(c(cc21)SC)SC)SC)SC)SC.c1c(c(cc2c1c1cc(SC)c(cc1c1cc(c(cc21)SC)SC)SC)SC)SC |
Title of publication | A Semiconductive Coordination Network Based on 2,3,6,7,10,11-Hexakis(methylthio)triphenylene and BiCl3 |
Authors of publication | Xu, Zhengtao; Li, Kunhao; Fettinger, James C.; Li, Jing; King, Michael M. |
Journal of publication | Crystal Growth & Design |
Year of publication | 2005 |
Journal volume | 5 |
Journal issue | 2 |
Pages of publication | 423 |
a | 7.7535 ± 0.0003 Å |
b | 13.8362 ± 0.0005 Å |
c | 14.0188 ± 0.0005 Å |
α | 107.763 ± 0.001° |
β | 98.73 ± 0.001° |
γ | 97.02 ± 0.001° |
Cell volume | 1392.76 ± 0.09 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0229 |
Residual factor for significantly intense reflections | 0.0197 |
Weighted residual factors for significantly intense reflections | 0.046 |
Weighted residual factors for all reflections included in the refinement | 0.0476 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.064 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | mokα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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Users of the data should acknowledge the original authors of the
structural data.