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Information card for entry 4507983
Preview
Coordinates | 4507983.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C44 H62 N4 O6 |
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Calculated formula | C44 H62 N4 O6 |
SMILES | COc1ccc2CCCC(=N\NC(=O)O[C@H]3C[C@H](CC[C@@H]3C(C)C)C)/c2c1c1c2C(=N\NC(=O)O[C@H]3C[C@H](CC[C@@H]3C(C)C)C)/CCCc2ccc1OC |
Title of publication | Preparative Resolution of (±)-Bis-tetralone by Means of Autoseeded Preferential Crystallization Induced by Solvent Evaporation (ASPreCISE) |
Authors of publication | Mahieux, J.; Sanselme, M.; Harthong, S.; Melan, C.; Aronica, C.; Guy, L.; Coquerel, G. |
Journal of publication | Crystal Growth & Design |
Year of publication | 2013 |
Journal volume | 13 |
Journal issue | 8 |
Pages of publication | 3621 |
a | 12.1738 ± 0.0005 Å |
b | 12.1738 ± 0.0005 Å |
c | 51.834 ± 0.003 Å |
α | 90° |
β | 90° |
γ | 120° |
Cell volume | 6652.7 ± 0.5 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 4 |
Space group number | 152 |
Hermann-Mauguin space group symbol | P 31 2 1 |
Hall space group symbol | P 31 2" |
Residual factor for all reflections | 0.0939 |
Residual factor for significantly intense reflections | 0.0904 |
Weighted residual factors for significantly intense reflections | 0.2157 |
Weighted residual factors for all reflections included in the refinement | 0.2217 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.977 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4507983.html
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Users of the data should acknowledge the original authors of the
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