Information card for entry 4509224

Structure parameters

• Common name: Barium Tetragallium Sulfide
• Formula: Ba Ga4 S7
• Calculated formula: Ba Ga4 S7
• Title of publication: Growth and Characterization of BaGa4S7: A New Crystal for Mid-IR Nonlinear Optics
• Authors of publication: Lin, Xinsong; Zhang, Ge; Ye, Ning
• Journal of publication: Crystal Growth & Design
• Year of publication: 2009
• Journal volume: 9
• Journal issue: 2
• Pages of publication: 1186
• a: 14.755 ± 0.005 Å
• b: 6.228 ± 0.002 Å
• c: 5.929 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 544.8 ± 0.3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293.15 K
• Number of distinct elements: 3
• Space group number: 31
• Hermann-Mauguin space group symbol: P m n 21
• Hall space group symbol: P 2ac -2
• Residual factor for significantly intense reflections: 0.0185
• Weighted residual factors for all reflections included in the refinement: 0.039
• Goodness-of-fit parameter for all reflections included in the refinement: 0.947
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No