Information card for entry 4512942

Structure parameters

• Formula: C42 H52 N2 Si2
• Calculated formula: C42 H52 N2 Si2
• Title of publication: Solution-Processed Ambipolar Organic Thin-Film Transistors by Blending p- and n-Type Semiconductors: Solid Solution versus Microphase Separation.
• Authors of publication: Xu, Xiaomin; Xiao, Ting; Gu, Xiao; Yang, Xuejin; Kershaw, Stephen V.; Zhao, Ni; Xu, Jianbin; Miao, Qian
• Journal of publication: ACS applied materials & interfaces
• Year of publication: 2015
• Journal volume: 7
• Journal issue: 51
• Pages of publication: 28019 - 28026
• a: 7.7025 ± 0.0012 Å
• b: 7.708 ± 0.0011 Å
• c: 16.958 ± 0.003 Å
• α: 78.06 ± 0.004°
• β: 88.605 ± 0.004°
• γ: 82.113 ± 0.004°
• Cell volume: 975.7 ± 0.3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1049
• Residual factor for significantly intense reflections: 0.0547
• Weighted residual factors for significantly intense reflections: 0.1467
• Weighted residual factors for all reflections included in the refinement: 0.1845
• Goodness-of-fit parameter for all reflections included in the refinement: 1.053
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No