Information card for entry 4514065
| Formula |
C18 H10 O3 S2 |
| Calculated formula |
C18 H10 O3 S2 |
| SMILES |
s1ccc2sc(cc12)C(=O)c1cc2ccccc2cc1C(=O)O |
| Title of publication |
Asymmetric Alkylthienyl Thienoacenes Derived from Anthra[2,3-b]thieno[2,3-d]thiophene for Solution-Processable Organic Semiconductors. |
| Authors of publication |
Ogawa, Yuta; Yamamoto, Kazuhiro; Miura, Chiyo; Tamura, Shigeki; Saito, Mitsuki; Mamada, Masashi; Kumaki, Daisuke; Tokito, Shizuo; Katagiri, Hiroshi |
| Journal of publication |
ACS applied materials & interfaces |
| Year of publication |
2017 |
| Journal volume |
9 |
| Journal issue |
11 |
| Pages of publication |
9902 - 9909 |
| a |
5.4841 ± 0.0001 Å |
| b |
12.2105 ± 0.0003 Å |
| c |
12.4889 ± 0.0003 Å |
| α |
63.407 ± 0.002° |
| β |
84.94 ± 0.002° |
| γ |
89.691 ± 0.002° |
| Cell volume |
744.37 ± 0.03 Å3 |
| Cell temperature |
93 K |
| Ambient diffraction temperature |
93 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0349 |
| Residual factor for significantly intense reflections |
0.0339 |
| Weighted residual factors for significantly intense reflections |
0.1032 |
| Weighted residual factors for all reflections included in the refinement |
0.1045 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.117 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4514065.html
