Information card for entry 4515383

Structure parameters

• Formula: C26 H14 N2 O4
• Calculated formula: C26 H14 N2 O4
• SMILES: c1ccccc1N1C(=O)c2ccc3c4c2c(ccc4C(=O)N(c2ccccc2)C3=O)C1=O
• Title of publication: Polymer-Assisted Single Crystal Engineering of Organic Semiconductors To Alter Electron Transport.
• Authors of publication: Xu, Haixiao; Zhou, Yecheng; Zhang, Jing; Jin, Jianqun; Liu, Guangfeng; Li, Yongxin; Ganguly, Rakesh; Huang, Li; Xu, Wei; Zhu, Daoben; Huang, Wei; Zhang, Qichun
• Journal of publication: ACS applied materials & interfaces
• Year of publication: 2018
• Journal volume: 10
• Journal issue: 14
• Pages of publication: 11837 - 11842
• a: 8.5676 ± 0.0006 Å
• b: 7.0454 ± 0.0004 Å
• c: 30.713 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1853.9 ± 0.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0914
• Residual factor for significantly intense reflections: 0.0638
• Weighted residual factors for significantly intense reflections: 0.1476
• Weighted residual factors for all reflections included in the refinement: 0.1655
• Goodness-of-fit parameter for all reflections included in the refinement: 1.058
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No