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Information card for entry 4515395
Preview
Coordinates | 4515395.cif |
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Original paper (by DOI) | HTML |
Formula | C91 H78 Cl3 N4 O8 Si |
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Calculated formula | C91 H78 Cl3 N4 O8 Si |
Title of publication | Processing Dependent Influence of the Hole Transport Layer Ionization Energy on Methylammonium Lead Iodide Perovskite Photovoltaics. |
Authors of publication | Park, So Min; Mazza, Samuel M.; Liang, Zhiming; Abtahi, Ashkan; Boehm, Alex M.; Parkin, Sean R.; Anthony, John E.; Graham, Kenneth R. |
Journal of publication | ACS applied materials & interfaces |
Year of publication | 2018 |
Journal volume | 10 |
Journal issue | 18 |
Pages of publication | 15548 - 15557 |
a | 10.853 ± 0.0002 Å |
b | 12.0141 ± 0.0002 Å |
c | 30.5957 ± 0.0006 Å |
α | 79.5986 ± 0.0009° |
β | 88.3033 ± 0.0009° |
γ | 81.2214 ± 0.0009° |
Cell volume | 3877.81 ± 0.12 Å3 |
Cell temperature | 90 ± 0.2 K |
Ambient diffraction temperature | 90 ± 0.2 K |
Number of distinct elements | 6 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0778 |
Residual factor for significantly intense reflections | 0.0529 |
Weighted residual factors for significantly intense reflections | 0.123 |
Weighted residual factors for all reflections included in the refinement | 0.138 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.051 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4515395.html
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