Information card for entry 4516103
| Formula |
C46 H46 Cl6 S8 Si4 |
| Calculated formula |
C46 H46 Cl6 S8 Si4 |
| SMILES |
s1c2c3c(c4c5c6c(scc6c6c3c(sc6)c3sc([Si](C)(C)C)cc3c3cc(sc23)[Si](C)(C)C)c2sc([Si](C)(C)C)cc2c2c(sc([Si](C)(C)C)c2)c5sc4)c1.ClC(Cl)Cl.ClC(Cl)Cl |
| Title of publication |
All-Thiophene-Based Double Helix: Synthesis, Crystal Structure, Chiroptical Property and Arylation. |
| Authors of publication |
Li, Bingbing; Zhang, Sheng; Li, Lu; Ma, Zhiying; Li, Chunli; Xu, Li; Wang, Hua |
| Journal of publication |
ACS omega |
| Year of publication |
2018 |
| Journal volume |
3 |
| Journal issue |
11 |
| Pages of publication |
16014 - 16020 |
| a |
11.9267 ± 0.0015 Å |
| b |
15.095 ± 0.002 Å |
| c |
17.872 ± 0.002 Å |
| α |
108.373 ± 0.002° |
| β |
105.652 ± 0.002° |
| γ |
101.258 ± 0.002° |
| Cell volume |
2798.6 ± 0.6 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0855 |
| Residual factor for significantly intense reflections |
0.0658 |
| Weighted residual factors for significantly intense reflections |
0.1598 |
| Weighted residual factors for all reflections included in the refinement |
0.1708 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.079 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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