Information card for entry 7000917

Structure parameters

• Formula: C34 H70 Cl12 Ga4 N6 O12
• Calculated formula: C34 H70 Cl12 Ga4 N6 O12
• SMILES: C1[O]2[Ga]34([O]5CCN(CCO[Ga]65OCCN(CC[O]36)C)C)([O]3CC[N]5(CCO[Ga]235OCCN(C1)C)C)[O]1CCN(CCO[Ga]21[O]4CCN(CCO2)C)C.C(Cl)(Cl)Cl.C(Cl)(Cl)Cl.C(Cl)(Cl)Cl.C(Cl)(Cl)Cl
• Title of publication: Homoleptic gallium(iii) and indium(iii) aminoalkoxides as precursors for sol‒gel routes to metal oxide nanomaterials
• Authors of publication: Mishra, Shashank; Daniele, Stéphane; Petit, Sarah; Jeanneau, Erwann; Rolland, Marc
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 14
• Pages of publication: 2569 - 2577
• a: 25.5428 ± 0.0012 Å
• b: 13.1025 ± 0.0003 Å
• c: 21.0117 ± 0.001 Å
• α: 90°
• β: 124.017 ± 0.007°
• γ: 90°
• Cell volume: 5828.7 ± 0.6 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0796
• Residual factor for significantly intense reflections: 0.0376
• Weighted residual factors for significantly intense reflections: 0.0767
• Weighted residual factors for all reflections included in the refinement: 0.0951
• Goodness-of-fit parameter for all reflections included in the refinement: 1.004
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No