Crystallography Open Database

Information card for entry 7001532

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Coordinates	7001532.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Ga2 Mo O10 Te2
Calculated formula	Ga2 Mo O10 Te2
Title of publication	Explorations of new phases in the GaIII/InIII‒MoVI‒SeIV/TeIV‒O systems
Authors of publication	Kong, Fang; Hu, Chun-Li; Hu, Ting; Zhou, Yong; Mao, Jiang-Gao
Journal of publication	Dalton Transactions
Year of publication	2009
Journal issue	25
Pages of publication	4962 - 4970
a	8.751 ± 0.004 Å
b	6.066 ± 0.002 Å
c	15.13 ± 0.007 Å
α	90°
β	90°
γ	90°
Cell volume	803.2 ± 0.6 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293 ± 2 K
Number of distinct elements	4
Space group number	62
Hermann-Mauguin space group symbol	P n m a
Hall space group symbol	-P 2ac 2n
Residual factor for all reflections	0.0145
Residual factor for significantly intense reflections	0.0131
Weighted residual factors for significantly intense reflections	0.0287
Weighted residual factors for all reflections included in the refinement	0.0292
Goodness-of-fit parameter for all reflections included in the refinement	1.094
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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