Information card for entry 7002376

Structure parameters

• Formula: C11 H28 Ga N3 Si
• Calculated formula: C11 H28 Ga N3 Si
• SMILES: [Ga]1([N]2(C([Si](C1)(C)C)N(CN(C2)C)C)C)(C)C
• Title of publication: Transmetallation and silylation products of aminal carbanions
• Authors of publication: Kamps, Ina; Langlitz, Irina; Mix, Andreas; Neumann, Beate; Stammler, Hans-Georg; Mitzel, Norbert W.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 39
• Pages of publication: 8363 - 8369
• a: 6.6926 ± 0.0001 Å
• b: 19.4695 ± 0.0005 Å
• c: 12.1088 ± 0.0003 Å
• α: 90°
• β: 90.926 ± 0.0015°
• γ: 90°
• Cell volume: 1577.59 ± 0.06 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.034
• Residual factor for significantly intense reflections: 0.0264
• Weighted residual factors for significantly intense reflections: 0.0651
• Weighted residual factors for all reflections included in the refinement: 0.0683
• Goodness-of-fit parameter for all reflections included in the refinement: 1.075
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No