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Information card for entry 7006839
Preview
Coordinates | 7006839.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | (K(dme)4)((Si(NEt)2C6H4)4).(dme) |
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Formula | C60 H106 K N8 O10 Si4 |
Calculated formula | C60 H106 K N8 O10 Si4 |
SMILES | [K]1234([O](CC[O]1C)C)([O](CC[O]2C)C)([O](CC[O]3C)C)[O](CC[O]4C)C.[Si]12([Si]3([Si]4([Si]51N(c1c(N5CC)cccc1)CC)N(c1c(N4CC)cccc1)CC)N(c1c(N3CC)cccc1)CC)N(c1c(N2CC)cccc1)CC.O(CCOC)C |
Title of publication | Insights into the making of a stable silylene. |
Authors of publication | Gehrhus, Barbara; Hitchcock, Peter B.; Pongtavornpinyo, Ruti; Zhang, Lihong |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2006 |
Journal issue | 15 |
Pages of publication | 1847 - 1857 |
a | 18.794 ± 0.0004 Å |
b | 18.5198 ± 0.0004 Å |
c | 20.7545 ± 0.0005 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 7223.8 ± 0.3 Å3 |
Cell temperature | 223 ± 2 K |
Ambient diffraction temperature | 223 ± 2 K |
Number of distinct elements | 6 |
Space group number | 33 |
Hermann-Mauguin space group symbol | P n a 21 |
Hall space group symbol | P 2c -2n |
Residual factor for all reflections | 0.0814 |
Residual factor for significantly intense reflections | 0.0567 |
Weighted residual factors for significantly intense reflections | 0.1093 |
Weighted residual factors for all reflections included in the refinement | 0.1191 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.065 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7006839.html
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Users of the data should acknowledge the original authors of the
structural data.