Information card for entry 7007303

Structure parameters

• Formula: C18 H32 N2 O2 Zn
• Calculated formula: C18 H32 N2 O2 Zn
• SMILES: [Zn]12(OC(=CC(=[N]1CCCC)C)C)OC(=CC(=[N]2CCCC)C)C
• Title of publication: Synthesis and characterization of zinc AP-MOCVD precursors and their utility in the growth of ZnO.
• Authors of publication: Matthews, Jason S.; Onakoya, Olamide O.; Ouattara, Tantiboro S.; Butcher, Raymond J.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2006
• Journal issue: 31
• Pages of publication: 3806 - 3811
• a: 8.0085 ± 0.0006 Å
• b: 11.0745 ± 0.0009 Å
• c: 12.4796 ± 0.001 Å
• α: 67.725 ± 0.001°
• β: 84.904 ± 0.001°
• γ: 69.131 ± 0.001°
• Cell volume: 955.66 ± 0.13 ų
• Cell temperature: 103 ± 2 K
• Ambient diffraction temperature: 103 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0372
• Residual factor for significantly intense reflections: 0.0286
• Weighted residual factors for significantly intense reflections: 0.0693
• Weighted residual factors for all reflections included in the refinement: 0.0716
• Goodness-of-fit parameter for all reflections included in the refinement: 0.998
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No