Information card for entry 7009817

Structure parameters

• Formula: C22 H54 Ga P3 Si3
• Calculated formula: C22 H54 Ga P3 Si3
• SMILES: [Ga]1(P(P(P1C(C)(C)C)C(C)(C)C)C(C)(C)C)C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Formation of a gallium triphosphorus heterocycle by reaction of the alkylgallium(I) compound Ga4[C(SiMe3)3]4 with tri(tert-butyl)cyclotriphosphane
• Authors of publication: Uhl, Werner; Benter, Maike
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 2000
• Journal issue: 18
• Pages of publication: 3133
• a: 9.3371 ± 0.0004 Å
• b: 20.885 ± 0.001 Å
• c: 16.444 ± 0.001 Å
• α: 90°
• β: 94.534 ± 0.007°
• γ: 90°
• Cell volume: 3196.6 ± 0.3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 193 ± 2 K
• Number of distinct elements: 5
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.0278
• Residual factor for significantly intense reflections: 0.0243
• Weighted residual factors for significantly intense reflections: 0.0666
• Weighted residual factors for all reflections included in the refinement: 0.07
• Goodness-of-fit parameter for all reflections included in the refinement: 0.574
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No