Information card for entry 7011748

Structure parameters

• Formula: C10 H30 Cl2 Ga N Sn3
• Calculated formula: C10 H30 Cl2 Ga N Sn3
• SMILES: [Sn]([N]([Sn](C)(C)C)([Sn](C)(C)C)[Ga](Cl)(Cl)C)(C)(C)C
• Title of publication: Lewis base properties of tris(trimethylstannyl)amine: unusually short M‒N bonds of the adduct compounds [X3M·N(SnMe3)3] (X = Cl, Br; M = Al, Ga, In) and [Cl2(CH3)M·N(SnMe3)3] (M = Al, Ga)
• Authors of publication: Q. m. Cheng; O. Stark; K. Merz; M. Winter; R. A. Fischer
• Journal of publication: J. Chem. Soc., Dalton Trans.
• Year of publication: 2002
• Journal issue: 14
• Pages of publication: 2933 - 2936
• a: 12.719 ± 0.003 Å
• b: 13.047 ± 0.003 Å
• c: 12.719 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2110.7 ± 0.9 ų
• Cell temperature: 203 ± 2 K
• Ambient diffraction temperature: 203 ± 2 K
• Number of distinct elements: 6
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0748
• Residual factor for significantly intense reflections: 0.0691
• Weighted residual factors for significantly intense reflections: 0.1869
• Weighted residual factors for all reflections included in the refinement: 0.1909
• Goodness-of-fit parameter for all reflections included in the refinement: 1.072
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No