Information card for entry 7012569

Structure parameters

• Formula: C10 H27 Ga I2 Si3
• Calculated formula: C10 H27 Ga I2 Si3
• Title of publication: Ga2I2[C(SiMe3)3]2 ‒ an organogallium(ii) halide containing a Ga‒Ga single bond
• Authors of publication: Uhl, Werner; El-Hamdan, Abdelhakim; Prött, Malte; Spuhler, Philipp; Frenking, Gernot
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 7
• Pages of publication: 1360
• a: 13.4567 ± 0.0009 Å
• b: 11.788 ± 0.001 Å
• c: 24.308 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3855.9 ± 0.5 ų
• Cell temperature: 193 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0548
• Residual factor for significantly intense reflections: 0.0441
• Weighted residual factors for significantly intense reflections: 0.1195
• Weighted residual factors for all reflections included in the refinement: 0.1292
• Goodness-of-fit parameter for all reflections included in the refinement: 0.929
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No