Information card for entry 7014739

Structure parameters

• Formula: C112 H184 As8 Li16 Si8
• Calculated formula: C112 H184 As8 Li16 Si8
• SMILES: [Li]1234[As]567([Li]8[As]9%10%11([Li]5[As]5%12%13%14[Li]7[As]7%15%16%17[Li]6[As]6%18%198[Li]9[As]89%20([Li]%21%22([c]%23([cH]%21cccc%23)[Si]%20(C(C)(C)C)C(C)(C)C)[c]%20([Si]%19(C(C)(C)C)C(C)(C)C)[cH]%22cccc%20)[Li]%11[As]%11%19([Li]%105)([Li]5%10([c]%20([cH]5cccc%20)[Si]%19(C(C)(C)C)C(C)(C)C)[c]5(cccc[cH]%105)[Si]%14(C(C)(C)C)C(C)(C)C)[Li]9[As]([Li]76)([Li]%12%15)([Li]%188)([Li]%13%11)[Si]([c]56cccc[cH]6[Li]6%165[c]5(cccc[cH]65)[Si]%17(C(C)(C)C)C(C)(C)C)(C(C)(C)C)C(C)(C)C)[Si]([c]53cccc[cH]45)(C(C)(C)C)C(C)(C)C)[Si]([c]31cccc[cH]23)(C(C)(C)C)C(C)(C)C
• Title of publication: Dichloro organosilicon bismuthanes as precursors for rare compounds with a bismuth-pnictogen or bismuth-tellurium bond.
• Authors of publication: Traut, Stephan; Hähnel, Alexander Peter; von Hänisch, Carsten
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2011
• Journal volume: 40
• Journal issue: 6
• Pages of publication: 1365 - 1371
• a: 15.174 ± 0.003 Å
• b: 62.037 ± 0.012 Å
• c: 18.027 ± 0.004 Å
• α: 90°
• β: 113.73 ± 0.03°
• γ: 90°
• Cell volume: 15535 ± 7 ų
• Cell temperature: 180 ± 2 K
• Ambient diffraction temperature: 180 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0949
• Residual factor for significantly intense reflections: 0.0453
• Weighted residual factors for significantly intense reflections: 0.0799
• Weighted residual factors for all reflections included in the refinement: 0.088
• Goodness-of-fit parameter for all reflections included in the refinement: 0.768
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No