Information card for entry 7015771

Structure parameters

• Formula: Ga8.35 K8 Si37.65
• Calculated formula: Ga8.3524 K8 Si37.6476
• Title of publication: Semiconducting behavior of type-I Si clathrate K8Ga8Si38.
• Authors of publication: Imai, Motoharu; Sato, Akira; Udono, Haruhiko; Imai, Yoji; Tajima, Hiroyuki
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2011
• Journal volume: 40
• Journal issue: 16
• Pages of publication: 4045 - 4047
• a: 10.4261 ± 0.0002 Å
• b: 10.4261 ± 0.0002 Å
• c: 10.4261 ± 0.0002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1133.35 ± 0.04 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 223
• Hermann-Mauguin space group symbol: P m -3 n
• Hall space group symbol: -P 4n 2 3
• Residual factor for all reflections: 0.0136
• Residual factor for significantly intense reflections: 0.013
• Weighted residual factors for significantly intense reflections: 0.0326
• Weighted residual factors for all reflections included in the refinement: 0.0327
• Goodness-of-fit parameter for all reflections included in the refinement: 1.098
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No