Information card for entry 7017970

Structure parameters

• Formula: C40 H52 Ge N2 O Si
• Calculated formula: C40 H52 Ge N2 O Si
• SMILES: CC(C)c1cccc(c1N1[Ge]N(c2c(C(C)C)cccc2C(C)C)[Si]1(c1ccccc1)c1ccccc1)C(C)C.C1CCCO1
• Title of publication: Synthesis and structural characterization of two-coordinate low-valent 14-group metal complexes bearing bulky bis(amido)silane ligands.
• Authors of publication: Yang, Dongming; Guo, Jianmei; Wu, Haishun; Ding, Yuqiang; Zheng, Wenjun
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2012
• Journal volume: 41
• Journal issue: 7
• Pages of publication: 2187 - 2194
• a: 10.8195 ± 0.0015 Å
• b: 18.818 ± 0.003 Å
• c: 19.24 ± 0.003 Å
• α: 90°
• β: 103.039 ± 0.002°
• γ: 90°
• Cell volume: 3816.3 ± 1 ų
• Cell temperature: 298 ± 2 K
• Ambient diffraction temperature: 298 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0888
• Residual factor for significantly intense reflections: 0.0543
• Weighted residual factors for significantly intense reflections: 0.1317
• Weighted residual factors for all reflections included in the refinement: 0.1495
• Goodness-of-fit parameter for all reflections included in the refinement: 1.026
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No